Chloride molecular doping technique on 2D materials: WS 2 and MoS 2. Pushing the performance limit of sub-100 nm molybdenum disulfide transistors. Improved contacts to MoS 2 transistors by ultra-high vacuum metal deposition. MoS 2 transistors with 1-nanometer gate lengths. Integrated circuits based on bilayer MoS 2 transistors.
High performance multilayer MoS 2 transistors with scandium contacts. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. Use of negative capacitance to provide voltage amplification for low power nanoscale devices. Physics of Semiconductor Devices 3rd edn (Wiley, Hoboken, New Jersey, 2008). Tunnel field-effect transistors as energy-efficient electronic switches. A high on-current-induced self-heating effect was also observed and studied. Negative differential resistance was observed at room temperature in the MoS 2 negative-capacitance FETs as the result of negative capacitance due to the negative drain-induced barrier lowering.
This device exhibits excellent performance in both on and off states, with a maximum drain current of 510 μA μm −1 and a sub-thermionic subthreshold slope, and is essentially hysteresis-free. Here, we combine these two advantages and demonstrate a molybdenum disulfide (MoS 2) two-dimensional steep-slope transistor with a ferroelectric hafnium zirconium oxide layer in the gate dielectric stack. Meanwhile, two-dimensional semiconductors such as atomically thin transition-metal dichalcogenides, due to their low dielectric constant and ease of integration into a junctionless transistor topology, offer enhanced electrostatic control of the channel 4, 5, 6, 7, 8, 9, 10, 11, 12. Adding a ferroelectric negative capacitor to the gate stack of a MOSFET may offer a promising solution to bypassing this fundamental barrier 3. The so-called Boltzmann tyranny defines the fundamental thermionic limit of the subthreshold slope of a metal–oxide–semiconductor field-effect transistor (MOSFET) at 60 mV dec −1 at room temperature and therefore precludes lowering of the supply voltage and overall power consumption 1, 2.
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